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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@IC= -4A *High Current Capability- IC= -7A *Complement to Type 2SD1411A APPLICATIONS *High current switching applications. *Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w -100 V -80 V -5 V -7 A -1 A 2 W 30 .cn mi e IB B Base Current-Continuous Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1018A TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.4 V A ICBO Collector Cutoff Current VCB= -100V; IE= 0 -5 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 A hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product Switching Times ton Turn-on Time w w scs .i w IC= -4A; VCE= -1V IE= 0; VCB= -10V; f= 1MHz IC= -1A; VCE= -4V .cn mi e 70 30 240 250 pF 10 MHz 0.4 IC= -3.0A ,IB1= -IB2= -0.3A, VCC= -30V; RL= 10 s tstg Storage Time 2.5 s tf Fall Time 0.5 s hFE-1 Classifications O 70-140 Y 120-240 isc Websitewww.iscsemi.cn 2 |
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